University of California, Riverside

Department of Electrical and Computer Engineering



A Quantum Dot based Electro-optic Modulator for Chip-to-chip Interconnects


A Quantum Dot based Electro-optic Modulator for Chip-to-chip Interconnects
 
Ya-Hong Xie
Department of Materials Science & Engineering, University of California at Los Angeles

Date: Monday, January 29, 2007
Time: 11:00am
Location: Bourns A265

Si integrated circuit technology is in a rather mature stage. There are, however, many technological needs remain unmet including electro-optical functionalities, RF performance, in addition to the numerous issues associated with the scaling into tens of nanometer dimension. The research interests in my group evolve around the general subject of increasing the functionality of Si.
This talk will begin with a brief introduction of the research subjects being carried out in my group at UCLA: examining the fundamental challenges in RF crosstalk isolation for mixed-signal applications and developing a practical technology module, studying the scaling limits of novel phase-change elements of chalcogenide materials for non-volatile memory applications, fabricating epitaxial InAs self-assembled quantum dots on Si for laser applications, exploring the feasibility of electro-optical modulators, guided assembly of epitaxial Ge quantum dots on Si patterned using diblock copolymer for potential quantum device applications, and fabricating high quality 2-dimensional electron gas in strained Si for quantum transport research.
Following the introduction, an in-depth discussion will be presented on a quantum dot based electro-optical modulator with its operational principle based on the non-linear response of II-VI semiconductor quantum dots positioned inside a dielectric vertical cavity. It is expected to have the advantages of low power, compatible with dense 2-dimensional array, and fast intrinsic frequency response. The operational principle, simulation and experimental results will be presented.

About the speaker:

Ya-Hong Xie obtained his BSc in Physics from Purdue University in 1981, and his MSc and PhD in Electrical Engineering from the University of California at Los Angeles in 1983 and 1986, respectively. He became a member of the technical staff in the Physical Sciences and Engineering Research Division of Bell Laboratories, Lucent technologies in 1986 where he remained until joining the faculty of UCLA in 1999 as a professor in the department of Materials Science and Engineering. His research interests include Si-based novel structures and devices, and molecular beam epitaxy.
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