University of California, Riverside

Department of Electrical and Computer Engineering



Bandgap Engineering with Compound Semiconductor Heterostructures


Bandgap Engineering with Compound Semiconductor Heterostructures
 

Charles W. Tu
Department of Electrical & Computer Engineering
University of California, San Diego

Date: October 27, 2003
Time: 11:10 am
Location: Bourns Hall A265

Bandgap engineering with compound semiconductor heterostructures has had enormous impact on science and technology, as evidenced by part of the 2000 Nobel Physics Prize awarded to Alferov and Kroemer "for developing semiconductor heterostructures used in high-speed- and opto-electronics." This talk shall illustrate examples of bandgap engineering and applications to devices through "dilute nitrides," which are conventional III-V compounds, e.g., GaAs, InP, and related ternaries, with a small amount of nitrogen incorporated. Due to the small size and large electronegativity of nitrogen atoms, nitrogen incorporation has a dramatic effect in bandgap reduction, band alignment, and band structure.

Biography:

Charles Tu joined the faculty of the Department of Electrical and Computer Engineering at UCSD in 1988. He obtained his B.Sc. in Physics (Honors) from McGill University in 1971. After earning his Ph.D. in Applied Physics from Yale University in 1978, he was a physics lecturer at Yale University until 1980. From 1980-88, he was a member of the technical staff at AT&T Bell Laboratories and became Distinguished MTS in 1987. Between 1981-97 he was ranked #613 most-widely cited physicists among 500,000 authors, as compiled by the Institute of Scientific Information. He was the ECE department chairman from 1999 to 2003, during which time twelve new faculty were recruited. He is a Fellow of the American Physical Society and the IEEE.
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