University of California, Riverside

Department of Electrical and Computer Engineering

Terahertz CMOS Circuit Designs and Their Applications for Ultra-high Data Rate (>100Gbps) and Short Distance Communications

Terahertz CMOS Circuit Designs and Their Applications for Ultra-high Data Rate....


Dr. Frank Chang

University of California, Los Angeles
Department of Electrical Engineering

When: Tuesday, January 6, 2009
Time: 3:30pm - 4:30pm
Location: 205/206 EBU2


Wedged between traditional microwave and optical technologies, the term of Terahertz was first named by Fleming in 1974. With frequencies commonly agreed nowadays from 300GHz to 3THz, Terahertz remains one of the least tapped regions of the electromagnetic spectrum. Terahertz image and communication systems have drawn increasing attention recently due to their unique capabilities in detecting/analyzing concealed objects and offering ultra-high data rate for short distance secured communications.

The generation of Terahertz signals is nonetheless nontrivial and traditionally accomplished by using free-electron or optical lasers, Gunn diodes or fundamental oscillation by using III-V based HBT/HEMT technologies. These prior techniques however suffer major disadvantages in size, cost, complexity and efficiency to generate useful signals for system applications in the frequency spectra of "Terahertz Gap". Traditionally, digital CMOS technologies have not been seriously considered for ultra-high frequency applications (>200GHz) due to its limited maximum frequency of oscillation (fmax). However, the continuous device scaling may soon shift the paradigm and enable further scaled CMOS technologies to reach Terahertz cut-off frequencies, as perceived by the 2007 ITRS roadmap. In this talk, we will highlight recent developments in Terahertz CMOS circuit designs and discuss their potential applications in ultra-high data rate and short distance communications.

About the Speaker:

Frank Chang is currently a Professor in the Electrical Engineering Department of UCLA. He was elected to US National Academy of Engineering in 2008 and received IEEE David Sarnoff Award (IEEE-wide Technical Field Award) in 2006 for his seminal contributions in developing and commercializing HBT power amplifiers and mixed-signal integrated circuits for wireless and wired communication systems. He was also the recipient of 2008 Pan Wen-Yuan Research Award for his pioneering research in developing III-V hetero-junction bipolar transistors. He was elected as a Fellow of IEEE in 1996 and received Rockwell's Leonardo da Vinci Award (Engineer of the Year) in 1992; National Chiao-Tung University's Distinguished Alumnus Award in 1997; and National Tsing-Hua University's Distinguished Alumnus Award in 2002.


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Electrical and Computer Engineering
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